PHASE-CHANGE MATERIAL MEMORY CELL

专利类型: 
相变材料专利导航
公开(公告)号: 
US20100096610A1
申请日: 
2009-10-19
申请局: 
US
摘要: 
A memory cell includes a current-steering device, a phase-change material disposed thereover, and a heating element and/or a cooling element.
原始专利权人: 
WANG HSINGYA A | SHEPARD DANIEL R | APODACA MAC D | ZHAO AILIAN
受让人: 
CONTOUR SEMICONDUCTOR, INC.
当前专利权人: 
Contour Semiconductor Inc