专利类型:
相变材料专利导航
公开(公告)号:
US20200219789A1
申请日:
2019-01-07
申请局:
US
摘要:
An integrated circuit structure may be formed using a phase change material to substantially fill at least one chamber within the integrated circuit assembly to increase thermal capacitance. The integrated circuit assembly may comprise a substrate, at least one integrated circuit device electrically attached to the substrate, a heat dissipation device, a thermal interface material between the integrated circuit device and the heat dissipation device, a chamber defined by the heat dissipation device, the substrate, and the integrated circuit device, and a phase change material within the chamber.
原始专利权人:
INTEL CORPORATION
受让人:
INTEL CORPORATION
当前专利权人:
Intel Corp