专利类型:
相变材料专利导航
公开(公告)号:
US9793207B1
申请日:
2016-07-20
申请局:
US
摘要:
An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further includes an antifuse material layer comprising a phase change material alloy of tantalum and nitrogen. A first surface of the antifuse material layer is present in direct contact with the first electrode. A second electrode is present in direct contact with a second surface of the antifuse material layer that is opposite the first surface of the antifuse material layer.
原始专利权人:
INTERNATIONAL BUSINESS MACHINES CORPORATION
受让人:
INTERNATIONAL BUSINESS MACHINES CORPORATION
当前专利权人:
International Business Machines Corp