Self-aligned masks using multi-temperature phase-change materials

专利类型: 
相变材料专利导航
公开(公告)号: 
US8120122B2
申请日: 
2009-11-30
申请局: 
US
摘要: 
A method of forming a pattern includes forming a first layer on a substrate, forming a second layer on the first layer, depositing a multi-temperature phase-change material on the second layer, patterning the second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, and patterning the first layer using the reflowed multi-temperature phase-change material as a mask.
原始专利权人: 
PALO ALTO RES CT INC
当前专利权人: 
Palo Alto Research Center Inc