专利类型:
相变材料专利导航
公开（公告）号:
US9343676B2
申请日:
2014-01-29
申请局:
US
摘要:
A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.
原始专利权人:
MICRON TECHNOLOGY, INC.
受让人:
U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT | JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT | MICRON TECHNOLOGY, INC. | MICRON TECHNOLOGY, INC.;MICRON SEMICONDUCTOR PRODUCTS, INC.
当前专利权人:
US Bank NA