Lithography system, method of heat dissipation and frame

专利类型: 
相变材料专利导航
公开(公告)号: 
US8325321B2
申请日: 
2007-07-24
申请局: 
US
摘要: 
The present invention relates to a lithography system for projecting an image or an image pattern on to a target such as a wafer. Energy that is accumulated in the target by the projection of the image or image pattern is removed from said target, such that expansion by local and/or overall heating is limited to a relevant pre-defined value, and wherein such heat removal is realised by the use of a phase transition in a heat absorbing material that is brought into thermal contact with said target. As a further elaboration, such material may be applied in combination with a further material having a superior coefficient of heat transport, and may be incorporated in an emulsion comprising a material having a superior coefficient of heat transfer. Said material may e.g. be adhered to a bottom face of the target, and may also be included in a frame.
原始专利权人: 
KRUIT PIETER | DANSBERG MICHEL P | WIELAND MARCO J
受让人: 
MAPPER LITHOGRAPHY IP B.V. | ASML NETHERLANDS B.V. | WITTEKAMP, J.J.
当前专利权人: 
ASML Netherlands BV | Mapper Lithopraphy IP BV