PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF DEPOSITING PHASE-CHANGE MATERIALS USING THE SAME

专利类型: 
相变材料专利导航
公开(公告)号: 
US20160102396A1
申请日: 
2015-10-06
申请局: 
US
摘要: 
A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer includes a process chamber including a loading chamber configured to load a substrate, and a depositing chamber configured to deposit ion particles of a phase-changeable material onto the substrate; a target member on an upper portion of the depositing chamber and configured to provide the ion particles of the phase-changeable material which react with process gases in a plasma state; a plasma generator configured to generate a process gas plasma from the process gases; a chuck on a lower portion of the depositing chamber and holding the substrate, the chuck including a heater configured to heat the substrate, and at least one electrode configured to guide the ion particles of the phase-changeable material to the substrate; and a supplementary heater in the process chamber and configured to transfer radiant heat around the substrate.
原始专利权人: 
SAMSUNG ELECTRONICS CO., LTD.
受让人: 
SAMSUNG ELECTRONICS CO., LTD.
当前专利权人: 
Samsung Electronics Co Ltd