Four-or-more-component-based chalcogenide phase-change material and memory device comprising the same

The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b  [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.