专利类型:
相变材料专利导航
公开(公告)号:
US8330137B2
申请日:
2011-04-11
申请局:
US
摘要:
A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating material is coplanar with an upper surface of the pillar; recessing the upper surface of the pillar below the upper surface of the insulating material to provide a recessed cavity; and forming a second phase change material atop the recessed cavity and the upper surface of the insulating material, wherein the second phase change material has a greater phase resistivity than the first phase change material.
原始专利权人:
IBM
受让人:
GLOBALFOUNDRIES U.S. 2 LLC | GLOBALFOUNDRIES INC. | WILMINGTON TRUST, NATIONAL ASSOCIATION | GLOBALFOUNDRIES U.S. INC.
当前专利权人:
GlobalFoundries US Inc